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| BB867... Silicon Tuning Diode For SAT - Indor units High capacitance ratio C1V /C25V (typ.15.8) Low series inductance Excellent uniformity and matching due to "in-line" matching assembly procedure 1 BB867-02V * Preliminary Parameter Diode reverse voltage Peak reverse voltageForward current Operating temperature range Storage temperature (R 5k ) 2 Type BB867-02V* Package SC79 Configuration single LS(nH) Marking 0.6 Y Maximum Ratings at TA = 25C, unless otherwise specified Symbol VR VRM IF Top Tstg Value 30 35 20 -55 ... 150 -55 ... 150 mA C Unit V 1 Nov-14-2002 BB867... Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz VR = 1 V, VR = 28 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz 1For Unit max. nA typ. IR 10 200 CT 8 0.5 0.45 CT1 /CT25 CT1 /CT28 CT/CT 14 8.7 0.55 0.52 15.8 16.7 2.8 9.4 0.6 5 - pF - details please refer to Application Note 047 2 Nov-14-2002 Capacitance matching1) % rS BB867... Diode capacitance CT = f = 1MHz 10 pF (VR ) 8 7 CT 6 5 4 3 2 1 00 10 1 10 V 10 2 VR 3 Nov-14-2002 |
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